Journal
RSC ADVANCES
Volume 5, Issue 80, Pages 65048-65051Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra11872g
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Funding
- National Natural Science Foundation of China [51472064]
- NSF [DMR-0852862, CBET-0754821]
- UW SER
- U. S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-10ER46728]
- Program for Innovation Research of Science in Harbin Institute of Technology (PIRS of HIT) [A201413]
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In this paper, we report the fast and sensitive lateral photovoltaic (LPE) effects in a Fe3O4/Si junction. Good rectifying I-V characteristics and large LPE are observed in the Fe3O4/Si junction. The LPE exhibits a linear dependence on the position of the laser spot, and the position sensitivity can reach 32.5 mV mm(-1). The optical response time and relaxation time of LPE were similar to 60 ns and 5 mu s, respectively. The enhanced LPE properties and the fast relaxation time in the Fe3O4/Si junction were caused by the formation of the inversion layer in the interface of Fe3O4/Si.
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