Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4913511
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Funding
- French ANR through the NOODLES project [ANR-13-NANO-0009]
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We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced back-scattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling. (C) 2015 AIP Publishing LLC.
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