Journal
APL MATERIALS
Volume 4, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4939657
Keywords
-
Funding
- US National Science Foundation [DMR-1409985]
- Extreme Electron Concentration Devices (EXEDE) MURI of the Office of Naval Research (ONR) [N00014-12-1-0976]
- US Department of Energy [DEFG02-02ER45994]
- UCSB MRL by MRSEC Program of the US National Science Foundation [DMR 1121053]
- Division Of Materials Research [1409985] Funding Source: National Science Foundation
Ask authors/readers for more resources
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm(2) V-1 s(-1) in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available