4.6 Review

Organic nano-floating-gate transistor memory with metal nanoparticles

Journal

NANO CONVERGENCE
Volume 3, Issue -, Pages -

Publisher

SPRINGEROPEN
DOI: 10.1186/s40580-016-0069-7

Keywords

Organic non-volatile memory; Metal nanoparticles; Nano-floating-gate; Organic field effect transistors

Funding

  1. National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2014M3A7B4051749]
  2. National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [NRF-2013M3C1A3065528]

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Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.

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