Journal
JOURNAL OF PHYSICS COMMUNICATIONS
Volume 2, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2399-6528/aaba24
Keywords
silicon on insulator technology; Germanium; waveguide components; infrared measurements; monolithic integrated circuits
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Funding
- Ministry of Education AcRF Tier-1 funding [R-263-000-B39-112]
- National Research Foundation Competitive Research Programs [NRF-CRP15-2015-01, NRF-CRP15-2015-02]
- National Research Foundation, Prime Minister's Office, Singapore under its medium sized centre program
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Silicon-on-insulator is an attractive choice for developing mid-infrared photonic integrated circuits. It benefits from mature fabrication technologies and integration with on-chip electronics. We report the development of SOI channel and rib waveguides for mid-infrared wavelengths centered at 3.7 mu m. Propagation loss of similar to 1.44 dB/cm and similar to 1.2 dB/cm has been measured for TE and TM polarizations in channel waveguides, respectively. Similarly, propagation loss of similar to 1.39 dB/cm and similar to 2.82 dB/cm has been measured for TE and TM polarized light in rib waveguides. The propagation loss is consistent with the measurements obtained using a different characterization setup and for the same waveguide structures on a different chip. Given the tightly confined single-mode in our 400 nm thick Si core, this propagation loss is among the lowest losses reported in literature. We also report the development of Ge-on-SOI strip waveguides for mid-infrared wavelengths centered at 3.7 mu m. Minimum propagation loss of similar to 8 dB/cm has been measured which commensurate with that required for high power mid-infrared sensing. Ge-on-SOI waveguides provide an opportunity to realize monolithically integrated circuit with on-chip light source and photodetector.
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