Journal
JOURNAL OF SEMICONDUCTORS
Volume 39, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/39/2/024002
Keywords
nanowire; photodetector; heterojunction
Categories
Funding
- National Science Foundation of China [61504136]
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences
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A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I-on/I-off ratios (up to 10(3)), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices.
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