4.6 Article

Confined transverse electric phonon polaritons in hexagonal boron nitrides

Journal

2D MATERIALS
Volume 5, Issue 1, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa9643

Keywords

transverse electric; hexagonal boron nitrides; 2D phonon polaritons; skin depth

Funding

  1. National Natural Science Foundation of China [61625502, 61574127, 61601408]
  2. ZJNSF [LY17F010008]
  3. Top-Notch Young Talents Program of China
  4. Fundamental Research Funds for the Central Universities [2017XZZX008-06]
  5. Innovation Joint Research Center for Cyber-Physical-Society System
  6. Nanyang Technological University for Nanyang Assistant Professorship Start-Up Grant
  7. Singapore Ministry of Education [MOE2015-T2-1-070, MOE2011-T3-1-005, RG174/16(S)]

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We predict the existence of confined transverse electric (TE) phonon polaritons in an ultrathin hexagonal boron nitride (hBN) slab below hBN's second transverse optical frequency. The skin depth of TE phonon polaritons can be decreased to subwavelength scale by increasing the thickness of hBN to several nanometers. Due to the strong spatial confinement, these TE phonon polaritons, different from TE graphene plasmons, can stably exist even when the permittivities of the superstrate and substrate are largely different. These revealed advantages of TE phonon polaritons might lead to potential applications of hBN in the manipulation of TE waves, such as the design of novel waveguides, polarizers, and the exploration of negative refraction between TE polaritons.

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