Oxygen-deficient strontium titanate based stretchable resistive memories

A stretchable non-volatile resistive memory is a fundamental element in realizing complex neuromorphic computing and compact logic application adaptable to wearable electronics. A room temperature deposited SrTiO3-x (STO) based resistive memory on stretchable polydimethylsiloxane (PDMS) substrate has been developed. The STO-based resistive memory does not require energy-intensive electroforming, exhibits stable complementary switching, long retention time, and reproducible endurance switching. The devices demonstrate the ability to operate under uniaxial tensile strain and extreme bending conditions. This work is an important step realizing metal oxide based stretchable non-volatile memories, critical to integrated devices for skin-mounted electronics. (C) 2018 Elsevier Ltd. All rights reserved.