Journal
JOURNAL OF THE KOREAN CERAMIC SOCIETY
Volume 55, Issue 1, Pages 1-20Publisher
SPRINGER HEIDELBERG
DOI: 10.4191/kcers.2018.55.1.10
Keywords
Chemiresistive sensor; Mixed metal oxide; p and n-type electrical properties; Interface; Gas sensors
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Funding
- Ministry of Trade, Industry & Energy (MOTIE), Korea Institute for Advancement of Technology (KIAT) through the Encouragement Program for The Industry of Economic Cooperation Region [R0004802]
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Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.
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