Journal
INTERNATIONAL JOURNAL OF NANOSCIENCE
Volume 17, Issue 1-2, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0219581X1760016X
Keywords
h-BN; NEGF_MS; DD_MS; graphene nanomesh
Categories
Ask authors/readers for more resources
This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95 mu m and 5 nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5 nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available