Longitudinal twinning -In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

Longitudinal twinning -In2Se3 nanowires with the (101(-)8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized -In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm(2)V(-1)S(-1) and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 x 10 (5) AW(-1), high external quantum efficiency up to 8.8 x 10 (7)% and a high detectivity of 1.58 x 10 (12) Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning -In2Se3 nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.