Journal
PHYSICAL REVIEW B
Volume 98, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.98.155436
Keywords
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Funding
- sp2-bonded materials program - Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the US Department of Energy [DE-AC02-05CH11231, KC2207]
- Office of Science, Office of Basic Energy Sciences, Scientific User Facilities Division, of the US Department of Energy [DE-AC02-05CH11231]
- National Science Foundation [DMR-1206512]
- Engineering and Physical Sciences Research Council (EPSRC) Centre for Doctoral Training in Theory and Simulation of Materials [EP/L015579/1]
- Thomas Young Centre [TYC-101]
- EPSRC [EP/L000202]
- Department of Defense through the National Defense Science & Engineering Graduate Fellowship Program [32 CFR 168a]
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We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
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