Journal
PHYSICAL REVIEW B
Volume 98, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.98.125414
Keywords
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Funding
- National Key Basic Research Program of China [2015CB921600, 2013CBA01603]
- National Natural Science Foundation of China [61625402, 11374142, 61574076]
- Fundamental Research Funds for the Central Universities
- Elemental Strategy Initiative
- JSPS KAKENHI Grant [JP15K21722]
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Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Here we report the gate voltage and temperature-dependent magnetotransport properties of gamma-InSe transistor devices with Hall mobility up to 2455 cm(2) V-1 s(-1) at the temperature of 1.7 K. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron (e-e) interactions are dominated dephasing mechanism for electronic transport in gamma-InSe at low temperatures. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer MoS2 and few-layer black phosphorus. These results enrich the fundamental understanding of electronic transport properties of InSe.
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