Journal
PHYSICAL REVIEW B
Volume 97, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.201407
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Funding
- Nanoelectronics Research Initiative SWAN center
- Intel Corporation
- National Science Foundation [EECS-1610008, DMR-1157490, DMR-1644779]
- State of Florida
- Div Of Electrical, Commun & Cyber Sys [1610008] Funding Source: National Science Foundation
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We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe2, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8m(e) is extracted from the SdH oscillations' temperature dependence; m(e) is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the K point. We attribute the FF parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio.
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