Journal
PHYSICAL REVIEW B
Volume 97, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.115445
Keywords
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Funding
- NSF of China [11474357]
- Ministry of Science and Technology of China (973 Project) [2016YFA0300504]
- National Basic Research Program of China (973 Program) [2013CB934500, 2013CBA01602]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH004]
- Strategic Priority Research Program (B) of the Chinese Academy of Sciences, CAS [XDB07010100]
- National Science Foundation (NSF) of the U.S. [DMR-1760668]
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The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
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