Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 6, Issue 42, Pages 20753-20759Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ta08315k
Keywords
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Funding
- National Natural Science Foundation of China [51321091, 51272129, 51227002]
- National key Research and Development Program of China [2016YFB1102201]
- Program of Introducing Talents of Disciplines to Universities in China (111 Project 2.0) [BP2018013]
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Sb-based perovskite structures have been studied as the potential materials to replace lead hybrid perovskite. However, their broad band gap makes them unsuitable for single-junction solar cells, which spurred researchers to design new strategies to narrow the band gap and broaden their photovoltaic application. Herein, a general doping strategy was designed to obtain lead-free and large size Sn-doped MA(3)Sb(2)I(9) single crystals. Their crystal structures and valence states were investigated in detail by X-ray diffraction and the X-ray photoelectron spectroscopy, revealing distinct lattice expansion, thus demonstrating the successful doping of Sn2+. After the doping of Sn2+, a significant 296 nm red-shifted light absorption peak was clearly observed, and the carrier mobility enhanced by about two-fold, as investigated by space charge-limited current (SCLC) and Hall effect measurements. The trend of the band gap determined by the first-principles calculations matches well with that of experiments. The corresponding narrowing mechanism of band gap after the doping is also revealed in detail. These extremely promising photoelectric properties of Sn-doped MA(3)Sb(2)I(9) shown herein motivate further exploration of their photovoltaic application.
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