4.6 Article

Dual interfacial modification engineering with p-type NiO nanocrystals for preparing efficient planar perovskite solar cells

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 6, Issue 47, Pages 13034-13042

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8tc04475a

Keywords

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Funding

  1. National Natural Science Foundation of China [61474047, 51002053, 51472094]
  2. Fujian Provincial Science Foundation for Distinguished Young Scholars [2015J06011]
  3. Fujian Provincial Youth Top-notch Talents Supporting Program
  4. Prominent Young Talents and New Century Excellent Talents Support Programs in Fujian Provincial University
  5. Graphene Powder AMP
  6. Composite Research Center of Fujian Province [2017H2001]
  7. Cultivation Program for Postgraduate in Scientific Research Innovation Ability of Huaqiao University [1611302063]

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Organic-inorganic halide perovskite solar cells with excellent photovoltaic properties still have some potential for further enhancement in device performance. Charge loss and carrier recombination at interfaces in perovskite solar cells are crucial factors that inhibit the power conversion efficiency. Here, we report a simple approach to overcome the drawbacks via modifying the interfaces between charge transport layers and perovskite layers in the perovskite solar cells with NiO nanocrystals. The optimized device achieves an excellent power conversion efficiency as high as 19.47%. The interface engineering with NiO nanocrystals results in improved interface contact properties, enhanced charge transport dynamics and suppressed charge recombination in the corresponding devices, which further contribute to increased values of open-circuit voltage and short-circuit current density. Therefore, this work provides novel guidelines toward dual interfacial modification engineering to boost the performance of perovskite solar cells.

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