4.8 Article

Evolutionary Metal Oxide Clusters for Novel Applications: Toward High-Density Data Storage in Nonvolatile Memories

Journal

ADVANCED MATERIALS
Volume 30, Issue 3, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201703950

Keywords

data storage; molecular electronics; nonvolatile memory; polyoxometalates (POMs)

Funding

  1. Natural Science Foundation of China [61604097, 61601305]
  2. Research Grant Council of HKSAR [T42-103/16-N, C7045-14E]
  3. Science and Technology Innovation Commission of Shenzhen [JCYJ20150625102943103, JCYJ20170302145229928, JCYJ20170302151653768]
  4. Department of Education of Guangdong Province [2015KQNCX141, 2016KTSCX120]
  5. Guangdong Provincial Department of Science and Technology [2017A010103026]

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Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next-generation memories because their properties can be readily modulated through chemical synthesis. Moreover, these memories can be fabricated through mild solution processing, which can be easily scaled up. Among the various materials, polyoxometalate (POM) molecules have attracted considerable attention for use as novel data-storage nodes for nonvolatile memories. Here, an overview of recent advances in the development of POMs for nonvolatile memories is presented. The general background knowledge of the structure and property diversity of POMs is also summarized. Finally, the challenges and perspectives in the application of POMs in memories are discussed.

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