Journal
NANOPHOTONICS
Volume 9, Issue 1, Pages 93-100Publisher
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2019-0320
Keywords
perovskite; quantum dots; composite films; luminescence downshifting; silicon solar cells
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Funding
- National Natural Science Foundation of China [61905011, 61722502]
- National Science Foundation of China/Research Grant Council of Hong Kong project [51761165021, N_CityU108/17]
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Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr(3)) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (eta(LDS)) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.
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