Journal
IEEE ACCESS
Volume 8, Issue -, Pages 49467-49476Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2020.2979883
Keywords
Transistors; Light emitting diodes; Switching circuits; Gray-scale; Backplanes; Leakage currents; Indexes; Micro-LED display; microdisplay; high-resolution; DRAM type; voltage driving; low leakage switch; IR drop compensation; CMOS backplane; and high-PPI
Categories
Funding
- Korea Institute for Advancement of Technology (KIAT) through the Korea Government (MOTIE) (Competency Development Program for Industry Specialist) [N0001883]
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Micro-displays based on micro-LEDs are becoming more and more attractive in AR/MR (Augmented/Mixed Reality) applications. A display size of 0.5 to 0.7-inch is preferred, with 5,000 PPI (Pixel Per Inch) or higher. Due to this pixel density and size, a CMOS (Complementary Metal-Oxide-Silicon) backplane is an ideal solution to drive these pixelized micro-LEDs. As the required pixel size gets smaller, the design of the appropriate pixel circuit becomes more challenging. The simplest 2T1C (2 transistors & x0026; 1 capacitor) pixel circuit has potential problems, due to the leakage current of the switch transistor and the voltage drop on the matrix array layout. In this paper, a pixel circuit is proposed as a solution to overcome these two issues. Our simulation results show that the variation of the driving current to the LED is improved by 95 & x0025;, and the IR drop error rate is around 2.2 & x0025; compared to the 2T1C circuit. The test results also show that the error rate of IPIXEL for the whole region of display is under 2.5 & x0025;. This work is verified using a test chip implementation with 180 nm CMOS process technology.
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