Journal
NANOSCALE RESEARCH LETTERS
Volume 15, Issue 1, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-020-03397-8
Keywords
beta-Ga2O3; PEDOT:PSS; Hybrid Schottky diodes; Photodetector
Funding
- National Natural Science Foundation of China [61774116, 61974112, 61974115]
- 111 Project 2.0 [BP2018013]
- National key Research and Development Program of China [2018YFB0406500]
- State Key Laboratory of Luminiscence and Applications
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In this paper, the hybrid beta-Ga(2)O(3)Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height phi(b)increases, and the ideality factorndecreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and beta-Ga(2)O(3)interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio ofR(254 nm)/R(400 nm)up to 1.26 x 10(3)are obtained, suggesting that the hybrid PEDOT:PSS/beta-Ga(2)O(3)Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.
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