The Investigation of Hybrid PEDOT:PSS/beta-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

In this paper, the hybrid beta-Ga(2)O(3)Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height phi(b)increases, and the ideality factorndecreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and beta-Ga(2)O(3)interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio ofR(254 nm)/R(400 nm)up to 1.26 x 10(3)are obtained, suggesting that the hybrid PEDOT:PSS/beta-Ga(2)O(3)Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.