Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 8, Issue 1, Pages 229-234Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.2975620
Keywords
p-GaN gate HEMT; normally-off; high-resistivity GaN
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Funding
- Ministry of Science and Technology, Taiwan [MOST-108-2218-E182-006]
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Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive p-GaN layer in the access region to a high-resistive GaN (HR-GaN); that oxygen plasma treatment used an AlN layer as an oxygen diffusion barrier layer to prevent further oxidizing of the underlying AlGaN barrier layer, and to ensure that the low-resistive p-GaN layer in the access region was fully oxidized. Relative to conventional p-GaN gated AlGaN/GaN HEMTs, these AlGaN/GaN HEMTs with HR-GaN layers achieved a lower drain leakage current of 4.4 x 10(-7) mA/mm, a higher drain current on/off ratio of 3.9 x 10(9), a lower on-state resistance of 17.1 Omega.mm, and less current collapse.
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