Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 19, Issue -, Pages 34-41Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2019.2956960
Keywords
GLAD; Nanowire; Metal Insulator Semiconductor; Photodetector
Categories
Funding
- National Institute of Technology Nagaland
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An integrate approach of growing vertical axial heterostructure (AH) nanowire (NW) with TiO2 and In2O3 may provide an alternative route for efficient improvement in internal gain and photosensitivity. Here, TiO2/In2O3 AH NW is synthesized on p-Si substrate inside e-beam evaporator using glancing angle deposition technique. Field emission gun scanning electron microscopy confirms the growth of vertically aligned TiO2/In2O3 AH NW NWs. Averagely, 1.5 times absorption enhancement is observed in TiO2/In2O3 AHNWcompared to the as-deposited TiO2 NW sample. The designed TiO2/In2O3 AH NW device shows superior optoelectronic performance in terms of fast response (T-R = 52.96 ms and T-F = 89.32 ms), high photosensitivity (similar to 1000 times), and good rectification ratio (similar to 10 times). In addition, maximum responsivity (11.17 A/W), high internal gain (36.8), superior detectivity (3.14 x 10(14) Jones) and low noise equivalent power (8.92 x 10(-15) W) are obtained for TiO2/In2O3 AH NW. A large linear dynamic range value of 59.14 dB is obtained for TiO2/In2O3 AHNW due to prolonged carrier recombination lifetime, multiple light scattering within NWs and efficient charge separation along the length of heterostructure. Therefore, the outstanding optoelectronic properties obtained with TiO2/In2O3 AH NW will ensure a wider promising electronic and optoelectronic device applications.
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