Journal
RUSSIAN JOURNAL OF ELECTROCHEMISTRY
Volume 56, Issue 10, Pages 859-867Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1023193520100031
Keywords
photoconductivity; amorphous carbon nitride; n-type semiconductor; solar cells; photovoltaic effect
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Engage program
- Canada Foundation for Innovation/Ontario Innovation Trust (CFI/OIT)
- Academic Development Fund of the University of Western Ontario
- Ontario Graduate Scholarship Program
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Nitrogen rich carbon nitride (CNx) materials were prepared using reactive magnetron sputtering from a pure nitrogen plasma at elevated deposition pressures and low deposition powers. Solid-state photovoltaic devices utilizing such materials were prepared and characterized. As-prepared CNx materials showed photoconductive behaviour and no photovoltaic effect. This was attributed to the p-doping effect of oxygen present in as-prepared CNx films resulting in formation of a compensated semiconductor. However, upon thermal annealing, CNx materials showed a pronounced photovoltaic effect consistent with the n-type semiconductor behaviour. This result demonstrates that nitrogen rich carbon nitride is a promising photovoltaic material for all-carbon photovoltaic solar cells.
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