New steps for advancing the Nothing On Insulator Triode 3nm gap and preliminary expanded technology

This paper presents new steps of the Nothing On Insulator (NOI) device advancing. From the simulations point of view, a better swing is accomplished by shorter vacuum gap and the transistor replacement by triode. The actual simulated NOI-Triode with 3nm gap possesses lower swing versus the previous NOI-Triode of 14nm gap. Functional simulations prove the current density vectors from Source to Drain with substantial Gate leakage current. Comparisons with similar vacuum nanotransistors of other authors reveal similar I-D-V-DS and I-D-V-GS curves, with superior currents for the actual NOI-Triode 3nm gap. A preliminary technology, based on laser ablation by MALDI technique, produced a gap of 10 mu m in ABS-conductor micro-wires deposited on glass substrate. An accurate NOI architecture was accomplished, but at expanded sizes, defined by the laser spot resolution.