Related references
Note: Only part of the references are listed.Recent progress of Na-flux method for GaN crystal growth
Yusuke Mori et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer
Jaemyung Kim et al.
APPLIED PHYSICS EXPRESS (2018)
Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2-6 in. GaN substrates by hydride vapor phase epitaxy with hardness control
Hajime Fujikura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer
Okkyun Seo et al.
AIP ADVANCES (2018)
Characterization of a 4-inch GaN wafer by X-ray diffraction topography
Jaemyung Kim et al.
CRYSTENGCOMM (2018)
Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy
Keisuke Yamane et al.
JOURNAL OF APPLIED PHYSICS (2016)
Direct growth of freestanding GaN on C-face SiC by HVPE
Yuan Tian et al.
SCIENTIFIC REPORTS (2015)
Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique
Mamoru Imade et al.
APPLIED PHYSICS EXPRESS (2014)
Growth of GaN Crystals by Na Flux Method
Yusuke Mori et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)
Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy
F. Lipski et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Growth of bulk GaN crystal by Na flux method under various conditions
Y. Mori et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Growth of bulk GaN crystals by Na flux method
Y. Mori et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 (2011)
Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
Fabio Alessio Marino et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Growth of GaN crystals by Na flux LPE method
Y. Mori et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Bulk GaN crystals grown by HVPE
Kenji Fujito et al.
JOURNAL OF CRYSTAL GROWTH (2009)
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
Tadao Hashimoto et al.
NATURE MATERIALS (2007)
Growth of a two-inch GaN single crystal substrate using the Na flux method
Fumio Kawamura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Growth of bulk GaN single crystals by flux method
XL Chen
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2005)
Study of GaN light-emitting diodes fabricated by laser lift-off technique
CF Chu et al.
JOURNAL OF APPLIED PHYSICS (2004)
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
R Chierchia et al.
JOURNAL OF APPLIED PHYSICS (2003)
High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior
W Saito et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Bulk GaN single crystals: growth conditions by flux method
YT Song et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate
K Motoki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2001)
Free-standing GaN substrates by hydride vapor phase epitaxy
SS Park et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
High breakdown GaNHEMT with overlapping gate structure
NQ Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2000)
Share Paper
