High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode

This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region's electric field distribution and disperses the high-peak electric field at the N-/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N-/N+ junctions to achieve SEB tolerance. The device's SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure.

Automated summary

This study presents a method to improve the single-event burnout (SEB) resistance of 4H-SiC JBS under high bias voltage and linear energy transfer conditions, validated through numerical simulations. The results demonstrate the superior SEB tolerance of 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) compared to conventional 4H-SiC JBS. By adjusting the structure parameters, the SEB performance of MBL-JBS is optimized, with significantly improved SEB threshold voltage compared to traditional structures.