Physical Properties of SiC Nanostructure for Optoelectronics Applications

A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd: YAG laser at two different laser wavelengths of 1064 nm and 532 nm. The structural, morphological, and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used laser. The structural result shows four different pecks at (111), (200), (220), and (311) planes related to Nano SiC. The transmission result presents that the optical energy gap value for the SiC nanostructure is depended on the wavelength of the used laser and it is found about the range (3.03 eV-3.23 eV). The investigations of the SEM and AFM show that the prepared SiC Nano-films having a grain size range (36.34-48.75) nm and roughness about 4.462 to 3.062 nm. SiC/Si hetero-junction devices show an enhanced performance at 532 nm.

Automated summary

SiC nanofilms were deposited and studied on quartz and silicon substrates using pulsed laser deposition with two different laser wavelengths. Results showed that the optical energy gap value for SiC nanostructure depended on the laser wavelength, and SiC/Si hetero-junction devices performed better at 532 nm.