Journal
ACS PHOTONICS
Volume 9, Issue 1, Pages 249-255Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c01449
Keywords
mid-infrared; integrated photonic circuits; integrated modulator; silicon photonics; germanium; free-carrier plasma dispersion effect
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Funding
- ANR Light-up Project [ANR-19-CE24-0002-01]
- Conseil General de l'Essonne
- French RENATECH network
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The research team has achieved a broadband integrated electro-optic modulator based on the SiGe photonics platform and the free-carrier plasma dispersion effect, capable of optical modulation in the range of 6.4 to 10.7 micrometers, with an operational frequency up to 225 MHz.
Mid-infrared spectroscopy is essential for identifying molecular species, while related electro-optic modulators are crucial for signal-to-noise enhancement via synchronous detection. Therefore, the development of integrated modulators is expected to have a major impact in compact and widespread sensing applications. In this work, we experimentally demonstrate a broadband integrated electro-optic modulator, based on a graded-index SiGe photonics platform and free-carrier plasma dispersion effect. Optical modulation is reported from 6.4 to 10.7 mu m wavelength, showing an operational frequency up to 225 MHz. These results pave the way for the development of multimolecule on-chip spectroscopic systems, operating at the longest mid-infrared wavelengths.
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