Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 13, Issue 40, Pages 9501-9509Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.2c01973
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Funding
- Alexsander von Humboldt Foundation
- National Natural Science Foundation of China [11704291, 51875417]
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process [Y202101]
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences [21YZ03]
- Natural Science Foundation of Jiangsu Province [BK.20210130]
- Innovative and Entrepreneurial Doctor in Jiangsu Province [JSSCBS20211428]
- High-Performance Computing Center of Wuhan University of Science and Technology
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Black arsenic phosphorus material demonstrates different optical and electronic properties at different x values, with the indirect band gap characteristics at x = 0.75 being particularly noteworthy.
Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x <= 0.25 is capable of broadband absorption, while b-AsxP1-x at x >= 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x >= 0.75, but a typical circuit system signal at x <= 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.
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