Journal
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume 560, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jmmm.2022.169566
Keywords
Domain wall; Antiferromagnets; Spin-orbit coupling; Special relativity; Magnetization dynamics
Funding
- STSM Grants from the COST Action Ultrafast opto-magneto-electronics for non-dissipative information technology'' [CA17123]
- IKERBASQUE (the Basque Foundation for Science)
- Spanish Ministry of Science and Innovation [PID2019-108075RB-C33/AEI/10.13039/501100011033]
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The motion of a Neel-like 180 domain wall in the layered collinear antiferromagnet Mn2Au under the influence of a time-dependent staggered spin-orbit field is studied, revealing that under certain conditions, the motion of the domain wall can be abruptly interrupted by external stimuli and transformed into a complex translational mobility.
The motion of a Neel-like 180 domain wall induced by a time-dependent staggered spin-orbit field in the layered collinear antiferromagnet Mn2Au is explored. Through an effective version of the two sublattice nonlinear sigma-model which does not take into account the antiferromagnetic exchange interaction directed along the tetragonal c-axis, it is possible to replicate accurately the relativistic and inertial traces intrinsic to the magnetic texture dynamics obtained through atomistic spin dynamics simulations for quasistatic processes. In the case in which the steady-state magnetic soliton motion is extinguished due to the abrupt shutdown of the external stimulus, its stored relativistic exchange energy is transformed into a complex translational mobility, being the rigid domain wall profile approximation no longer suitable. Although it is not feasible to carry out a detailed follow-up of its temporal evolution in this case, it is possible to predict the inertial based distance travelled by the domain wall in relation to its steady-state relativistic mass. This exhaustive dynamical characterization for different time-dependent regimes of the driving force is of potential interest in antiferromagnetic domain wall-based device applications.
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