Self-ordered pore structure of anodized aluminum on silicon and pattern transfer

A practical approach of transferring a hexagonal array of nanosized pores produced in porous alumina into silicon and other substrates is discussed. The alumina pores have dimensions of 25-250 nm pore diameters and 50-300 nm pore spacings depending on the anodization conditions used. The characteristics of the alumina pores and the alumina-silicon interface are studied for different substrate materials and anodizing conditions. The unique structure of the barrier layer allows for the alumina to be directly used as an etch mask for pattern transfer into the silicon substrate. (C) 2000 American Institute of Physics. [S0003-6951(00)00601-X].