Journal
SURFACE SCIENCE
Volume 445, Issue 1, Pages 109-114Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(99)01054-7
Keywords
angle resolved photoemission; inverse photoemission spectroscopy; low index single crystal surfaces; silicon carbide; surface electronic phenomena (work function, surface potential, surface states, etc.)
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We have investigated the 3 x 3 reconstruction of the 6H-SiC(0001) surface with angle-resolved direct and inverse photoemission (ARUPS and IPES). The surface was prepared by heating the sample in a Si flux and showed an excellent 3 x 3 LEED pattern. In the ARUPS spectra, three occupied surface states were found at the energies 0.5 eV, 1.5 eV and 1.9 eV below E-F. In the IPES spectra, an unoccupied dispersionless surface state was observed at 0.5 eV above E-F. Thereby, the reconstruction has a semiconducting character with a surface bandgap of 1.0 eV. This result agrees well with recent theoretical results that predict strong electron-correlation effects, leading to a Mott-Hubbard ground state. (C) 2000 Elsevier Science B.V. All rights reserved.
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