Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 39, Issue 1AB, Pages L9-L12Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.39.L9
Keywords
III-V compound semiconductor; diluted magnetic semiconductor; iron; molecular beam epitaxy
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The Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature T-s rangirig from 260-350 degrees C, Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga1-xFexAs. X-ray diffraction data have indicated that the lattice constant of Ga1-xFexAs decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.
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