Journal
PHYSICAL REVIEW B
Volume 61, Issue 4, Pages 2643-2650Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.61.2643
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Generation of dense electron-hole plasmas in silicon with intense 100-fs laser pulses is studied by time-resolved measurements of the optical reflectivity at 625 nm. I;or fluences F between 10 mJ/cm(2)<400 mJ/cm(2), plasma generation is dominated by strong two-photon absorption, and possibly higher-order nonlinearities, which lead to very steep spatial carrier distributions. The maximum carrier densities at the sample surface are in excess of 10(22) cm(-3), and therefore, the reflectivity shows a mainly Drude-like free-carrier response. Within the Drude model, limits for the optical effective mass and the damping time are determined.
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