Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 12, Issue 2, Pages 134-136Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/68.823494
Keywords
charge carrier processes; quantum-well (QW) lasers; semiconductor lasers
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Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures were designed to study the effect of the thickness of the barriers on the distribution of carriers amongst the quantum wells by comparing the transition cavity lengths (TCL) of mirror image AMQW lasers, The TCL method provides a quantitative measure of the degree to which the uneven carrier distribution affects the net gain of wells owing to the position of the well in the active region. We experimentally demonstrate that reducing the thickness of the barrier layers from 100 to 50 Angstrom results in a significantly more uniform carrier distribution. The thickness of the barriers is thus shown to be an important design parameter for MQW lasers.
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