Journal
INTERNATIONAL JOURNAL OF ELECTRONICS
Volume 87, Issue 2, Pages 227-234Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/002072100132363
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A gas pressure sensing device based on ZrO2 thin films for use at high temperatures is presented. The films were deposited on glass substrates through electron beam evaporation of ZrO2 tablets in vacuum with residual oxygen pressure of the order of 10(-4) mbar. The piezoresistive characteristics of the device for different pressures of N-2, CO2, Ar and He at different temperatures were investigated. The experimental results and the underlying physical mechanisms are discussed.
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