Auger processes in InAs self-assembled quantum dots

An experimental evidence of Anger-like excitation processes in InAs/GaAs quantum dots is demonstrated . Photoluminescence spectra of resonantly excited dots exhibit a rich satellite structure below the ground-state emission band. The energy position and the intensity distribution of the satellites are analyzed and an interpretation of the satellites as due to shake-up processes of the interacting carriers in the higher quantum dot states is suggested. (C) 2000 Elsevier Science B.V. All rights reserved.