Journal
PHYSICAL REVIEW B
Volume 61, Issue 8, Pages 5353-5357Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.61.5353
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We present a cluster-model calculation of local vibrational modes in hexagonal GaN using the valence-force model of Keating and Kane with valence-force parameters fitted to Raman and neutron-scattering experiments. We used the scaling-factor approximation to describe the interatomic forces of the central defect atom. For hexagonal GaN:Mg we find three modes at 136, 262, and 656 cm(-1) in-good agreement with experiments. For cubic GaN:As the isolated impurity atom gives us local modes at 95, 125, 151,and 250 cm(-1), which were observed as sharp lines in the experiment. For Si and C defects for which local modes have not yet been reported, a similar choice of scaling factor as for Mg and As leads to modes that strongly hybridize with the host phonons.
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