Conduction-band offset of single InAs monolayers on GaAs

A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a band-offset ratio of 70 divided by 30. The present results agree well with reported theoretical values and allow the accurate modeling of electronic states in GaAs/AlGaAs heterostructures containing InAs ultrathin layers. (C) 2000 American Institute of Physics. [S0003-6951(00)03509-9].