Journal
APPLIED PHYSICS LETTERS
Volume 76, Issue 9, Pages 1146-1148Publisher
AMER INST PHYSICS
DOI: 10.1063/1.125965
Keywords
-
Categories
Ask authors/readers for more resources
A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a band-offset ratio of 70 divided by 30. The present results agree well with reported theoretical values and allow the accurate modeling of electronic states in GaAs/AlGaAs heterostructures containing InAs ultrathin layers. (C) 2000 American Institute of Physics. [S0003-6951(00)03509-9].
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available