Journal
SURFACE & COATINGS TECHNOLOGY
Volume 125, Issue 1-3, Pages 396-399Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0257-8972(99)00588-5
Keywords
Rutherford backscattering spectroscopy; thin film; TiNxOy; X-ray diffraction; X-ray photoelectron spectroscopy
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This paper presents the growth and characterization of titanium oxinitride (TiNxOy) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450 degrees C to 46 at.% at 750 degrees C). Below 550 degrees C, the films do not show any X-ray diffraction pattern. Above 550 degrees C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 theta shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of such materials is described from this behaviour in terms of lattice vacancies and N/O substitutions, leading to different titanium valencies confirmed by X-ray photoelectron spectroscopy (XPS) analysis. (C) 2000 Elsevier Science S.A. All rights reserved.
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