High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

High performance GaN/AlGaN MODFETs grown by MBE directly on SiC substrate have been successfully fabricated and characterised. The epitaxial layers of the device were grown by RF-assisted MBE. Excellent device uniformity, reproducibility and scalability were obtained. A maximum output density of 6.5W/mm was obtained for a 0.1mm device. On scaling to 1.0mm gate-width, a total output power of 6.3W with 38% PPS at 10GHz was achieved. These device results demonstrate the excellent potential of GaN-based FETs as power calls for practical microwave applications.