Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume 442, Issue 1-3, Pages 171-178Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0168-9002(99)01217-6
Keywords
APD; scintillator; gamma rays
Ask authors/readers for more resources
A fabrication process has been developed which allows the beveled-edge-type of avalanche photodiode (APD) to be made without the need for the artful bevel formation steps. This new process, applicable to both APD arrays and to discrete detectors, greatly simplifies manufacture and should lead to significant cost reduction for such photodetectors. This is achieved through a simple innovation that allows isolation around the device or array pixel to be brought into the plane of the surface of the silicon wafer, hence a planar process. A description of the new process is presented along with performance data for a variety of APD device and array configurations. APD array pixel gains in excess of 10 000 have been measured. Array pixel coincidence timing resolution of less than 5 ns has been demonstrated. An energy resolution of 6% for 662 keV gamma-rays using a CsI(T1) scintillator on a planar processed large-area APD has been recorded. Discrete APDs with active areas up to 13 cm(2) have been operated. (C) 2000 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available