Journal
PHYSICAL REVIEW LETTERS
Volume 84, Issue 11, Pages 2441-2444Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.84.2441
Keywords
-
Categories
Ask authors/readers for more resources
We have studied diffusion of Ge into subsurface layers of Si(100). Auger electron diffraction measurements show Ge in the fourth layer after submonolayer growth at temperatures as low as 500 degrees C. Density functional theory predictions of equilibrium Ge subsurface distributions are consistent with the measurements. We identify a surprisingly low energy pathway resulting from low interstitial formation energy in the third and fourth layers. Doping significantly affects the formation energy suggesting that n-type doping may lead to sharper Si/Ge interfaces.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available