Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures

We calculate the low temperature resistivity in low-density two-dimensional hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature-dependent nonmonotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.