Journal
APPLIED PHYSICS LETTERS
Volume 76, Issue 12, Pages 1570-1572Publisher
AMER INST PHYSICS
DOI: 10.1063/1.126098
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Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski-Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blue-violet photoluminescence of the dots is observed, persisting up to room temperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00212-6].
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