Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 21, Pages 11083-11088Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b00610
Keywords
graphene; organic electronics; organic semiconductors; photodetectors; phototransistors; photoconductivity
Funding
- Stichting Fundamenteel Onderzoek der Materie
- Zernike Institute for Advanced Materials
- European Research Council (ERC) [306983]
- European Research Council (ERC) [306983] Funding Source: European Research Council (ERC)
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Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create largearea graphene transistors made out of graphene grown by chemical vapor deposition. Low transit time devices are fabricated out of mechanically exfoliated graphene on top of mechanically exfoliated hexagonal boron nitride using standard e-beam lithography. Responsivities exceeding 10(5) A/W are obtained for the low transit time devices.
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