Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 39, Issue 4B, Pages 2094-2097Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.39.2094
Keywords
DRAM; capacitor; Ta2O5; Ru; dielectric constant; leakage current
Categories
Ask authors/readers for more resources
As one candidate capacitor for dynamic random access memories (DRAMs) of 4 Gbit and beyond, we investigated the electrical properties of Ru/Ta2O5/Ru. In this paper, the dielectric constant of Ta2O5 was measured as a function of annealing temperature and, also, its dependence on film thickness was studied. The effect of postannealing, which was performed after forming a capacitor, on the leakage current of Ru/crystalline-Ta2O5/Ru capacitor was evaluated. Additionally, the leakage current was investigated as a function of Ta2O5 film thickness. Through these experiments, a reliable 7 Angstrom Toxeq. of Ta2O5 with a Ru electrode was obtained, which indicates that the Ru/crystalline-Ta2O5/Ru capacitor is a promising candidate for DRAMs of 4 Gbit and beyond.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available