Coalescence in microchannel epitaxy of InP

We have studied the lateral coalescence in microchannel epitaxy (MCE) of InP by LPE. In the present study, we suggest that there are two modes of the coalescence, one-zipper and two-zipper. New patterns of microchannels were designed to realize these two coalescence modes. The coalesced MCE islands were chemically etched and it was found that dislocations were usually generated in the coalesced region when the growth was carried out in the two-zipper mode; however, when the growth occurred in the one-zipper mode, dislocations were not found in the coalesced region. It is concluded that by conducting the growth in the one-zipper mode, the formation of dislocations in the coalesced region can be avoided. (C) 2000 Elsevier Science B.V. All rights reserved.