4.7 Article

Luminescence properties of anodically etched porous Zn

Journal

APPLIED SURFACE SCIENCE
Volume 158, Issue 3-4, Pages 330-334

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(00)00039-8

Keywords

anodization; semiconductor; photoluminescence; XPS; porous Zn

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Anodization of Zn in HF/ethanol and NaOH solution yields porous structure, which luminesces in the visible region. It is observed that the luminescence properties of these samples have been found quite different. The p-Zn prepared in NaOH displays two luminescence peaks near 420 and 520 nm. On the contrary, the p-Zn prepared in HF displays luminescence peak centered at 410 nm. These samples are further studied by annealing in O-2 and N-2 ambience. Further, temperature dependence photoluminescence (PL) spectra, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) have been performed on these samples, and the possible mechanisms causing the observed PL properties from p-Zn are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

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